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 OBSOLETE PD - 93943
IRF6150
HEXFET(R) Power MOSFET
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Ultra Low RSS(on) per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel
VSS
-20V
RSS(on) max
IS
0.036@VGS1,2 = -4.5V -7.9A 0.052@VGS1,2 = -2.5V -6.3A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an ex-
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tremely efficient and reliable device.
The FlipFET package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VSS IS @ TC = 25C IS @ TC = 70C ISM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Source- Source Voltage Continuous Current, VGS1 = VGS2 = -4.5V Continuous Current, VGS1 = VGS2 = -4.5V Pulsed Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 7.9 6.3 40 3.0 1.9 24 12 -55 to + 150
Units
V A W mW/C V C
Thermal Resistance
Symbol
RJA RJ-PCB
Parameter
Junction-to-Ambient Junction-to-PCB mounted
Typ.
17
Max.
42 ---
Units
C/W
www.irf.com
1
07/26/04
OBSOLETE
IRF6150
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)SSS
V(BR)SSS/TJ
Parameter Source-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Source-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Source Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Miller Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RSS(on) VGS(th) gfs ISSS IGSS Qg Qgs QG1-S2 td(on) tr td(off) tf Ciss Coss Crss
Min. -20 --- --- -0.45 TBD --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -TBD --- --- --- --- --- --- --- --- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.036 VGS1 = VGS2 = -4.5V, IS = -7.9A 0.052 VGS1 = VGS2 = -2.5V, IS = -6.3A -1.2 V VSS = VGS, IS = -250A --- S VSS = -10V, IS = -7.9A -1.0 VSS = -20V, VGS = 0V A -25 VSS = -16V, VGS = 0V, TJ = 125C 100 VGS = 12V nA -100 VGS = -12V TBD IS = -TBDA TBD nC VSS = -16V TBD VGS = -5.0V --- VSS = -10V --- IS = -1.0A ns --- RG = 6.0 --- VGS = -5.0V --- VGS = 0V --- pF VSS = -15V --- = 1.0MHz
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Gate voltage applied to both gates. When mounted on 1 inch square 2oz copper on FR-4
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www.irf.com
OBSOLETE
IRF6150
Bi-Directional MOSFET Outline Dimension
IPU@T)
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
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